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| STFV4N150 N-CHANNEL 1500V - 5 - 4A TO-220FH Very High Voltage PowerMESHTM MOSFET Table 1: General Features TYPE STFV4N150 s s s s s s s Figure 1: Package ID 4A Pw 40 W VDSS 1500 V RDS(on) <7 TYPICAL RDS(on) = 5 AVALANCHE RUGGEDNESS GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES HIGH SPEED SWITCHING FULLY PLASTIC TO-220 PACKAGE CREEPAGE DISTANCE PATH IS > 4mm TO-220FH DESCRIPTION Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. The creepage path is what makes this package unique from TO-220FP. The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package met all stringent safety norms in high voltage applications. Figure 2: Internal Schematic Diagram APPLICATIONS s SWITCH MODE POWER SUPPLIES Table 2: Order Codes SALES TYPE STFV4N150 MARKING FV4N150 PACKAGE TO-220FH PACKAGING TUBE Rev. 1 July 2005 1/10 STFV4N150 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Operating Junction Temperature Storage Temperature Value 1500 1500 30 4 2.5 12 40 0.32 -55 to 150 Unit V V V A A A W W/C C ( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed Table 4: Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.12 62.5 C/W C/W Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 4 350 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating,TC = 125C VGS = 30 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 100 5 7 Typ. Max. Unit V A A nA V 2/10 STFV4N150 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 30 V , ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 750 V, ID = 2 A, RG = 4.7 , VGS = 10 V (see Figure 17) VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 20) Min. Typ. 3.5 1300 120 12 35 30 45 45 30 10 9 50 Max. Unit S pF pF pF ns ns ns ns nC nC nC Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100 A/s VDD = 45V (see Figure 18) ISD = 4 A, di/dt = 100 A/s VDD = 45V, Tj = 150C (see Figure 18) 510 3 12 650 4 12.6 Test Conditions Min. Typ. Max. 4 12 2 Unit A A V ns C A ns C A (1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/10 STFV4N150 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/10 STFV4N150 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics Figure 14: Normalized BVdss vs Temperature 5/10 STFV4N150 Figure 15: Maximum Avalanche Energy vs Temperature 6/10 STFV4N150 Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Waveform Figure 17: Switching Times Test Circuit For Resistive Load Figure 20: Gate Charge Test Circuit Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/10 STFV4N150 TO-220FH (Fully plastic High voltage) MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409 P011W 8/10 STFV4N150 Table 9: Revision History Date 07-Jul-2005 Revision 1 First release. Description of Changes 9/10 STFV4N150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 |
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